Universal optimal hole-doping concentration in single-layer high-temperature cuprate superconductors

Physics – Condensed Matter – Superconductivity

Scientific paper

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8 pages, 4 figures; added references ;accepted for the publication in Supercond. Sci. Technol ; Ref. 13 is revised

Scientific paper

10.1088/0953-2048/19/9/004

We argue that in cuprate physics there are two types, hole content per CuO$_2$ plane ($P_{pl}$) and the corresponding hole content per unit volume ($P_{3D}$), of hole-doping concentrations for addressing physical properties that are two-dimensional (2D) and three-dimensional (3D) in nature, respectively. We find that superconducting transition temperature ($T_c$) varies systematically with $P_{3D}$ as a superconducting \textquotedblleft $dome$\textquotedblright with a universal optimal hole-doping concentration $P_{3D}^{opt.}$ = 1.6 $\times$ 10$^{21}$ cm$^{-3}$ for single-layer high temperature superconductors. We suggest that $P_{3D}^{opt.}$ determines the upper bound of the electronic energy of underdoped single-layer high-$T_c$ cuprates.

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