Time-resolved second harmonic generation study of buried semiconductor heterointerfaces using soliton-induced transparency

Details Time-resolved second harmonic generation study of buried semiconductor heterointerfaces using soliton-induced transparency Time-resolved second harmonic generation study of buried semiconductor heterointerfaces using soliton-induced transparency

2011-10-23

arxiv.org/abs/1110.5086v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

The transient second harmonic generation and linear optical reflectivity signals measured simultaneously in reflection from GaAs/GaSb/InAs and GaAs/GaSb heterostructures revealed a new mechanism for creating self-induced transparency in narrow bandgap semiconductors at low temperatures, which is based on the dual-frequency electro-optic soliton propagation. This allows the ultrafast carrier dynamics at buried semiconductor heterointerfaces to be studied.

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