Snake States in Graphene p-n Junctions

Details Snake States in Graphene p-n Junctions Snake States in Graphene p-n Junctions

2010-12-05

arxiv.org/abs/1012.0959v2

Phys. Rev. Lett. 107, 046602 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

supplemental material available at http://marcuslab.harvard.edu/papers/Williams_SnakesSupp.pdf

Scientific paper

10.1103/PhysRevLett.107.046602

We investigate transport in locally-gated graphene devices, where carriers are injected and collected along, rather than across, the gate edge. Tuning densities into the p-n regime significantly reduces resistance along the p-n interface, while resistance across the interface increases. This provides an experimental signature of snake states, which zig-zag along the p-n interface and remain stable as applied perpendicular magnetic field approaches zero. Snake states appear as a peak in transverse resistance measured along the p-n interface. The generic role of snake states disordered graphene is also discussed.

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