Electronic properties of the pseudogap system (TaSe4)2I

Details Electronic properties of the pseudogap system (TaSe4)2I Electronic properties of the pseudogap system (TaSe4)2I

1998-06-13

arxiv.org/abs/cond-mat/9806169v2

Solid State Communications 115 (2000) 411-415

Physics

Condensed Matter

Strongly Correlated Electrons

41 pages latex, 11 ps figures, uses IOP macros

Scientific paper

The room temperature ``metallic'' properties of the quasi-one-dimensional charge density wave system (TaSe4)2I differ markedly from those expected of either a Fermi or a Luttinger Liquid. We discuss evidence for the simplest possible explanation of the observed behavior of (TaSe4)2I in its conducting phase - namely the existence of large quasi-static fluctuations of structural order, which however remain of finite extent above the charge density wave transition temperature. These fluctuations produce a pseudogap in the density of states. We compute the temperature dependence of the optical and DC conductivities of (TaSe4)2I in its conducting phase, the nature of its core hole spectra, and the NMR relaxation rate. Predictions for these quantities are made on the basis of a Lee, Rice and Anderson model. This model represents the simplest theory of a pseudogap, and gives satisfactory agreement with experiment in the cases where comparisons can be made. In contrast, the predictions of a strongly correlated (Luttinger Liquid) model appear to to contradict the data. The chief remaining discrepancy is that the gap appearing in transport quantities is less than that observed in photoemission. We discuss some possibilities for resolving this issue.

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