Spin flip scattering in magnetic junctions

Details Spin flip scattering in magnetic junctions Spin flip scattering in magnetic junctions

1997-12-05

arxiv.org/abs/cond-mat/9712075v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages

Scientific paper

10.1103/PhysRevB.58.9212

Processes which flip the spin of an electron tunneling in a junction made up of magnetic electrodes are studied. It is found that: i) Magnetic impurities give a contribution which increases the resistance and lowers the magnetoresistance, which saturates at low temperatures. The conductance increases at high fields. ii) Magnon assisted tunneling reduces the magnetoresistance as $T^{3/2}$, and leads to a non ohmic contribution to the resistance which goes as $V^{3/2}$, iii) Surface antiferromagnetic magnons, which may appear if the interface has different magnetic properties from the bulk, gives rise to $T^2$ and $V^2$ contributions to the magnetoresistance and resistance, respectively, and, iv) Coulomb blockade effects may enhance the magnetoresistance, when transport is dominated by cotunneling processes.

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