Counterflow measurements in strongly correlated GaAs hole bilayers: evidence for electron-hole pairing

Details Counterflow measurements in strongly correlated GaAs hole bilayers: evidence for electron-hole pairing Counterflow measurements in strongly correlated GaAs hole bilayers: evidence for electron-hole pairing

2004-02-06

arxiv.org/abs/cond-mat/0402186v2

Phys. Rev. Lett. 93, 036802 (2004)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4+ pages, 4 figures

Scientific paper

10.1103/PhysRevLett.93.036802

We study interacting GaAs bilayer hole systems, with very small interlayer tunneling, in a counterflow geometry where equal currents are passed in opposite directions in the two, independently contacted layers. At low temperatures, both the longitudinal and Hall counterflow resistances tend to vanish in the quantum Hall state at total bilayer filling $\nu=1$, demonstrating the pairing of oppositely charged carriers in opposite layers. The temperature dependence of the counterflow Hall resistance is anomalous compared to the other transport coefficients: even at relatively high temperatures ($\sim$600mK), it develops a very deep minimum, with a value that is about an order of magnitude smaller than the longitudinal counterflow resistivity.

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