Unipolar transport and shot noise in metal-semiconductor-metal structures

Details Unipolar transport and shot noise in metal-semiconductor-metal structures Unipolar transport and shot noise in metal-semiconductor-metal structures

2002-10-22

arxiv.org/abs/cond-mat/0210484v1

Physics

Condensed Matter

Statistical Mechanics

10 pages, 8 figures. Accepted for publication in Journal of Applied Physics (Scheduled 1 January 2003)

Scientific paper

10.1063/1.1525863

We carry out a self-consistent analytical theory of unipolar current and noise properties of metal-semiconductor-metal structures made of highly resistive semiconductors in the presence of an applied bias of arbitrary strength. By including the effects of the diffusion current we succeed to study the whole range of carrier injection conditions going from low level injection, where the structure behaves as a linear resistor, to high level injection, where the structure behaves as a space charge limited diode. We show that these structures display shot noise at the highest voltages. Remarkably the crossover from Nyquist noise to shot noise exhibits a complicate behavior with increasing current where an initial square root dependence (double thermal noise) is followed by a cubic power law.

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