Tip-gating Effect in Scanning Impedance Microscopy of Nanoelectronic Devices

Details Tip-gating Effect in Scanning Impedance Microscopy of Nanoelectronic Devices Tip-gating Effect in Scanning Impedance Microscopy of Nanoelectronic Devices

2002-10-22

arxiv.org/abs/cond-mat/0210474v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

11 pages, 3 figures, to be published in Appl. Phys. Lett

Scientific paper

10.1063/1.1531833

Electronic transport in semiconducting single-wall carbon nanotubes is studied by combined scanning gate microscopy and scanning impedance microscopy (SIM). Depending on the probe potential, SIM can be performed in both invasive and non-invasive mode. High-resolution imaging of the defects is achieved when the probe acts as a local gate and simultaneously an electrostatic probe of local potential. A class of weak defects becomes observable even if they are located in the vicinity of strong defects. The imaging mechanism of tip-gating scanning impedance microscopy is discussed.

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