Spin-dependent tunneling through a symmetric semiconductor barrier: the Dresselhaus effect

Details Spin-dependent tunneling through a symmetric semiconductor barrier: the Dresselhaus effect Spin-dependent tunneling through a symmetric semiconductor barrier: the Dresselhaus effect

2005-09-26

arxiv.org/abs/cond-mat/0509641v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 5 figures, to appear in PRB

Scientific paper

10.1103/PhysRevB.72.153314

Spin-dependent tunneling through a symmetric semiconductor barrier is studied including the k^3 Dresselhaus effect. The spin-dependent transmission of electron can be obtained analytically. By comparing with previous work(Phys. Rev. B 67. R201304 (2003) and Phys. Rev. Lett. 93. 056601 (2004)), it is shown that the spin polarization and interface current are changed significantly by including the off-diagonal elements in the current operator, and can be enhanced considerably by the Dresselhaus effect in the contact regions.

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