Tight-binding model of spin-polarized tunnelling in (Ga,Mn)As-based structures

Details Tight-binding model of spin-polarized tunnelling in (Ga,Mn)As-based structures Tight-binding model of spin-polarized tunnelling in (Ga,Mn)As-based structures

2005-09-25

arxiv.org/abs/cond-mat/0509629v1

Physics

Condensed Matter

Materials Science

4 paker, 2 figures, submited to Phisica E

Scientific paper

10.1016/j.physe.2005.12.074

The Landauer-Buettiker formalism combined with the tight-binding transfer matrix method is used to describe the results of recent experiments: the high tunneling magnetoresistance (TMR) in (Ga,Mn)As-based trilayers and highly polarized spin injection in p-(Ga,Mn)As/n-GaAs Zener diode. For both TMR and Zener spin current polarization, the calculated values agree well with those observed experimentally. The role played in the spin dependent tunneling by carrier concentration and magnetic ion content is also studied.

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