Topological defects in the edge state structure in a bilayer electron system

Details Topological defects in the edge state structure in a bilayer electron system Topological defects in the edge state structure in a bilayer electron system

2005-03-18

arxiv.org/abs/cond-mat/0503478v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures included

Scientific paper

10.1103/PhysRevB.72.041305

We experimentally demonstrate, for the first time, formation of point-like topological defects in the edge state structure in the quantum Hall effect regime. By using of a selective population technique, we investigate equilibration processes between the edge states in bilayer electron structures with a high tunnelling rate between layers. Unexpected flattening of the I-V curves in perpendicular magnetic field at a specific filling factor combination and the recovery of the conventional nonlinear I-V characteristics in tilted fields give a strong evidence for the existence of topological defects.

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