High-quality quantum point contact in two-dimensional GaAs (311)A hole system

Details High-quality quantum point contact in two-dimensional GaAs (311)A hole system High-quality quantum point contact in two-dimensional GaAs (311)A hole system

2008-09-29

arxiv.org/abs/0809.5047v1

Appl. Phys. Lett. 93, 212101 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1063/1.3036011

We studied ballistic transport across a quantum point contact (QPC) defined in a high-quality, GaAs (311)A two-dimensional (2D) hole system using shallow etching and top-gating. The QPC conductance exhibits up to 11 quantized plateaus. The ballistic one-dimensional subbands are tuned by changing the lateral confinement and the Fermi energy of the holes in the QPC. We demonstrate that the positions of the plateaus (in gate-voltage), the source-drain data, and the negative magneto-resistance data can be understood in a simple model that takes into account the variation, with gate bias, of the hole density and the width of the QPC conducting channel.

Affiliated with

Also associated with

No associations

Rating

High-quality quantum point contact in two-dimensional GaAs (311)A hole system does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with High-quality quantum point contact in two-dimensional GaAs (311)A hole system, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-quality quantum point contact in two-dimensional GaAs (311)A hole system will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-49871