Physics – Condensed Matter – Materials Science
Scientific paper
1996-12-02
Physics
Condensed Matter
Materials Science
15 pages, 4 figures. Z. Phys. Chem, in print
Scientific paper
Ab initio molecular dynamics simulations are employed to investigate the dominant migration mechanism of the gallium vacancy in gaas as well as to assess its free energy of formation and the rate constant of gallium self-diffusion. our analysis suggests that the vacancy migrates by second nearest neighbour hops. the calculated self-diffusion constant is in good agreement with the experimental value obtained in ^69 GaAs/ ^71 GaAs isotope heterostructures and at significant variance with that obtained earlier from interdiffusion experiments in GaAlAs/GaAs-heterostructures.
Bockstedte Michel
Scheffler Matthias
No associations
LandOfFree
Theory of self-diffusion in GaAs does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Theory of self-diffusion in GaAs, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Theory of self-diffusion in GaAs will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-498386