Filling-Factor-Dependent Magnetophonon Resonance in Graphene

Details Filling-Factor-Dependent Magnetophonon Resonance in Graphene Filling-Factor-Dependent Magnetophonon Resonance in Graphene

2007-04-02

arxiv.org/abs/0704.0027v4

Phys. Rev. Lett. 99, 087402 (2007)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 2 figures; mistakes due to an erroneous electron-phonon coupling constant have been corrected; mode splitting is larg

Scientific paper

10.1103/PhysRevLett.99.087402

We describe a peculiar fine structure acquired by the in-plane optical phonon at the Gamma-point in graphene when it is brought into resonance with one of the inter-Landau-level transitions in this material. The effect is most pronounced when this lattice mode (associated with the G-band in graphene Raman spectrum) is in resonance with inter-Landau-level transitions 0 -> (+,1) and (-,1) -> 0, at a magnetic field B_0 ~ 30 T. It can be used to measure the strength of the electron-phonon coupling directly, and its filling-factor dependence can be used experimentally to detect circularly polarized lattice modes.

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