Physics – Condensed Matter – Materials Science
Scientific paper
2003-06-02
Physics
Condensed Matter
Materials Science
8 pages and 3 figures
Scientific paper
10.1063/1.1606873
The spin relaxation time of electrons in GaAs and GaN are determined with a model that includes momentum scattering by phonons and ionized impurities, and spin scattering by the Elliot-Yafet, D'yakonov-Perel, and Bir-Aronov-Pikus mechanisms. Accurate bands generated using a long-range tight-binding Hamiltonian obtained from empirical pseudopotentials are used. The inferred temperature-dependence of the spin relaxation lifetime agrees well with measured values in GaAs. We further show that the spin lifetimes decrease rapidly with injected electrons energy and reach a local maximum at the longitudinal optical phonon energy. Our calculation predicts that electron spin lifetime in pure GaN is about 3 orders of magnitude longer than in GaAs at all temperatures, primarily as a result of the lower spin-orbit interaction and higher conduction band density of states.
Krishnamurthy Supriya
Newman Nathan
Schilfgaarde Mark van
No associations
LandOfFree
Spin lifetimes of electrons injected into GaAs and GaN does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Spin lifetimes of electrons injected into GaAs and GaN, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Spin lifetimes of electrons injected into GaAs and GaN will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-484615