Strong exciton binding in quantum structures through remote dielectric confinement

Details Strong exciton binding in quantum structures through remote dielectric confinement Strong exciton binding in quantum structures through remote dielectric confinement

1998-04-03

arxiv.org/abs/cond-mat/9804029v1

Phys. Rev. Lett. 80, 4995 (1998)

Physics

Condensed Matter

Materials Science

4 pages, 3 PostScript figures embedded, best printed in color. Uses RevTex, multicol, and psfig styles. To appear in Phys. Rev

Scientific paper

10.1103/PhysRevLett.80.4995

We propose a new type of hybrid systems formed by conventional semiconductor nanostructures with the addition of remote insulating layers, where the electron-hole interaction is enhanced by combining quantum and dielectric confinement over different length scales. Due to the polarization charges induced by the dielectric mismatch at the semiconductor/insulator interfaces, we show that the exciton binding energy can be more than doubled. For conventional III-V quantum wires such remote dielectric confinement allows exciton binding at room temperature.

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