Microscopic Model for a Strongly Correlated Superconducting Single-Electron-Transistor

Details Microscopic Model for a Strongly Correlated Superconducting Single-Electron-Transistor Microscopic Model for a Strongly Correlated Superconducting Single-Electron-Transistor

2004-11-03

arxiv.org/abs/cond-mat/0411076v1

Physics

Condensed Matter

Superconductivity

6 pages, to appear in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.71.014504

We model a Superconducting Single-Electron Transistor operating by repulsive interactions. The device consists of a ring of Hubbard clusters, placed between electrodes and capacitively coupled to a gate potential. In each cluster, a pair of electrons at appropriate filling feels a weak effective interaction which leads to pairing in part of the parameter space. Thus, the system can host many bound pairs, with correlation induced binding. When the charging energy exceeds the pairing energy, single-electron tunneling prevails; in the opposite regime, we predict the Coulomb blockade pattern of two-electron tunneling. This suggests that in tunneling experiments repulsion-induced pairs may behave in a similar way as phonon-induced ones.

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