Stochastic current switching in bistable resonant tunneling systems

Details Stochastic current switching in bistable resonant tunneling systems Stochastic current switching in bistable resonant tunneling systems

2004-11-03

arxiv.org/abs/cond-mat/0411075v1

Phys. Rev. B 71, 165326 (2005)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

21 pages, 5 figures

Scientific paper

10.1103/PhysRevB.71.165326

Current-voltage characteristics of resonant-tunneling structures often exhibit intrinsic bistabilities. In the bistable region of the I-V curve one of the two current states is metastable. The system switches from the metastable state to the stable one at a random moment in time. The mean switching time \tau depends exponentially on the bias measured from the boundary of the bistable region V_{th}. We find full expressions for \tau (including prefactors) as functions of bias, sample geometry, and in-plane conductivity. Our results take universal form upon appropriate renormalization of the threshold voltage V_{th}. We also show that in large samples the switching initiates inside, at the edge, or at a corner of the sample depending on the parameters of the system.

Affiliated with

Also associated with

No associations

Rating

Stochastic current switching in bistable resonant tunneling systems does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Stochastic current switching in bistable resonant tunneling systems, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stochastic current switching in bistable resonant tunneling systems will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-47941