Kondo Effect in Electromigrated Gold Break Junctions

Details Kondo Effect in Electromigrated Gold Break Junctions Kondo Effect in Electromigrated Gold Break Junctions

2004-10-28

arxiv.org/abs/cond-mat/0410752v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 3 figures

Scientific paper

We present gate-dependent transport measurements of Kondo impurities in bare gold break junctions, generated with high yield using an electromigration process that is actively controlled. Thirty percent of measured devices show zero-bias conductance peaks. Temperature dependence suggests Kondo temperatures \~7K. The peak splitting in magnetic field is consistent with theoretical predictions for g=2, though in many devices the splitting is offset from 2guB by a fixed energy. The Kondo resonances observed here may be due to atomic-scale metallic grains formed during electromigration.

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