Metal-Semiconductor Transition in Armchair Carbon Nanotubes by Symmetry Breaking

Details Metal-Semiconductor Transition in Armchair Carbon Nanotubes by Symmetry Breaking Metal-Semiconductor Transition in Armchair Carbon Nanotubes by Symmetry Breaking

2004-09-17

arxiv.org/abs/cond-mat/0409464v2

Appl. Phys. Lett., 85, 4178 (2004)

Physics

Condensed Matter

Materials Science

3 pages, 3 figures, published on APL

Scientific paper

10.1063/1.1811792

The electronic band structure of armchair carbon nanotubes may be considerably modified by potentials with angular dependence. Different angular modes V_q ~ cos(q*theta) have been studied within a tight-binding scheme. Using symmetry arguments, we demonstrate a bandgap opening in these metallic nanotubes when certain selection rules are satisfied for both potential and nanotube structure. We estimate the bandgap opening as a function of both the external potential strength and the nanotube radius and suggest an effective mechanism of metal-semiconductor transition by combination of different forms of perturbations.

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