Ballistic spin-polarized transport and Rashba spin precession in semiconductor nanowires

Details Ballistic spin-polarized transport and Rashba spin precession in semiconductor nanowires Ballistic spin-polarized transport and Rashba spin precession in semiconductor nanowires

2001-05-03

arxiv.org/abs/cond-mat/0105049v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

19 pages (incl. 9 figures). To be published in PRB

Scientific paper

10.1103/PhysRevB.64.024426

We present numerical calculations of the ballistic spin-transport properties of quasi-one-dimensional wires in the presence of the spin-orbit (Rashba) interaction. A tight-binding analog of the Rashba Hamiltonian which models the Rashba effect is used. By varying the robustness of the Rashba coupling and the width of the wire, weak and strong coupling regimes are identified. Perfect electron spin-modulation is found for the former regime, regardless of the incident Fermi energy and mode number. In the latter however, the spin-conductance has a strong energy dependence due to a nontrivial subband intermixing induced by the strong Rashba coupling. This would imply a strong suppression of the spin-modulation at higher temperatures and source-drain voltages. The results may be of relevance for the implementation of quasi-one-dimensional spin transistor devices.

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