Influence of resonant tunneling on the imaging of atomic defects on InAs(110) surfaces by low-temperature scanning tunneling microscopy

Details Influence of resonant tunneling on the imaging of atomic defects on InAs(110) surfaces by low-temperature scanning tunneling microscopy Influence of resonant tunneling on the imaging of atomic defects on InAs(110) surfaces by low-temperature scanning tunneling microscopy

1999-05-12

arxiv.org/abs/cond-mat/9905159v1

Physics

Condensed Matter

Materials Science

3 pages, 4 figures, published in Appl. Phys. A 66, 171 (1998)

Scientific paper

We have used a low-temperature scanning tunneling microscope (STM) to study the surface of heavily doped semiconductor InAs crystals. The crystals are cleaved in situ along the (110) plane. Apart from atomically flat areas, we also observe two major types of atomic scale defects which can be identified as S dopant atoms and as As vacancies, respectively. The strong bias voltage dependence of the STM image of the impurities can be explained in terms of resonant tunneling through localized states which are present near the impurity.

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