Spintronics and ferromagnetism in wide-band-gap semiconductors

Physics – Condensed Matter – Materials Science

Scientific paper

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6 pages, 5 figures 85 references; Proceedings of 27th International Conference on Physics of Semiconductors, Flagstaff, Arizon

Scientific paper

10.1063/1.1993996

Recent progress in understanding and controlling spintronic properties of
(Ga,Mn)As and related compounds is contrasted to diverging experimental and
theoretical results concerning the origin of high temperature ferromagnetism
discovered in an ample class of magnetically doped wide-band-gap
semiconductors.

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