Electronic charge reconstruction of doped Mott insulators in multilayered nanostructures

Details Electronic charge reconstruction of doped Mott insulators in multilayered nanostructures Electronic charge reconstruction of doped Mott insulators in multilayered nanostructures

2006-12-13

arxiv.org/abs/cond-mat/0612312v1

Phys. Rev. B. 75, 125114-1--8 (2007); Virtual Journal of Nanoscale Science and Technology, Vol. 15, Iss. 13, (2007).

Physics

Condensed Matter

Strongly Correlated Electrons

9 pages, 8 figures

Scientific paper

10.1103/PhysRevB.75.125114

Dynamical mean-field theory is employed to calculate the electronic charge reconstruction of multilayered inhomogeneous devices composed of semi-infinite metallic lead layers sandwiching barrier planes of a strongly correlated material (that can be tuned through the metal-insulator Mott transition). The main focus is on barriers that are doped Mott insulators, and how the electronic charge reconstruction can create well-defined Mott insulating regions in a device whose thickness is governed by intrinsic materials properties, and hence may be able to be reproducibly made.

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