Exciton Mott transition in Si Revealed by Terahertz Spectroscopy

Details Exciton Mott transition in Si Revealed by Terahertz Spectroscopy Exciton Mott transition in Si Revealed by Terahertz Spectroscopy

2012-03-23

arxiv.org/abs/1203.5179v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 3 figures

Scientific paper

Exciton Mott transition in Si is investigated by using terahertz time-domain spectroscopy. The excitonic correlation as manifested by the 1s-2p resonance is observed above the Mott density. The scattering rate of charge carriers is prominently enhanced at the proximity of Mott density, which is attributed to the non-vanishing exciton correlation in the metallic electron-hole plasma. Concomitantly, the signature of plasmon-exciton coupling is observed in the loss function spectra.

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