Enhancement of Exciton Emission from Zno Nanocrystalline Films by Pulsed Laser Annealing

Details Enhancement of Exciton Emission from Zno Nanocrystalline Films by Pulsed Laser Annealing Enhancement of Exciton Emission from Zno Nanocrystalline Films by Pulsed Laser Annealing

2003-11-13

arxiv.org/abs/cond-mat/0311310v1

Appl. Surf. Sci. 226 (2004) 242-248

Physics

Condensed Matter

Materials Science

Scientific paper

10.1016/j.apsusc.2003.11.038

Pulsed ArF laser annealing in air and in hydrogen atmosphere improves the optical properties of ZnO nanostructured films. Independently on the ambient atmosphere, laser annealing produces two major effects on the photoluminescence (PL) spectra: first, the efficiency of the exciton PL increases due to decrease of the number of non-radiative recombination centers; second, the intensity of the defect-related orange band decreases because of the removing of excessive oxygen trapped into the films during deposition. However, annealing in the ambient air also increases the intensity of the green band related to oxygen vacancies. We show that the combination of laser annealing and passivation of oxygen vacancies by hydrogen results in films free of defect-related emission and keeps intact their nanostructural character.

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