Spin dephasing in III-V nanowires

Details Spin dephasing in III-V nanowires Spin dephasing in III-V nanowires

2011-06-23

arxiv.org/abs/1106.4618v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

15 pages, 7 figures included

Scientific paper

We use semiclassical Monte Carlo approach to investigate spin polarized transport in InP and InSb nanowires. Spin dephasing in III-V channels is caused due to D'yakonov- Perel (DP) relaxation and due to Elliott-Yafet (EY) relaxation. The DP relaxation occurs because of bulk inversion asymmetry (Dresselhaus spin-orbit interaction) and structural inversion asymmetry (Rashba spin-orbit interaction). The injection polarization direction studied is that along the length of the channel. The dephasing rate is found to be very strong for InSb as compared to InP which has larger spin dephasing lengths. The ensemble averaged spin components vary differently for both InP and InSb nanowires. The steady state spin distribution also shows a difference between the two III-V nanowires.

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