Hole Transport in p-Type ZnO

Details Hole Transport in p-Type ZnO Hole Transport in p-Type ZnO

2006-05-11

arxiv.org/abs/cond-mat/0605287v1

Physics

Condensed Matter

Materials Science

5page, 5 figures, accepted for publication in Jpn. J. Appl. Phys

Scientific paper

10.1143/JJAP.45.6346

A two-band model involving the A- and B-valence bands was adopted to analyze the temperature dependent Hall effect measured on N-doped \textit{p}-type ZnO. The hole transport characteristics (mobilities, and effective Hall factor) are calculated using the ``relaxation time approximation'' as a function of temperature. It is shown that the lattice scattering by the acoustic deformation potential is dominant. In the calculation of the scattering rate for ionized impurity mechanism, the activation energy of 100 or 170 meV is used at different compensation ratios between donor and acceptor concentrations. The theoretical Hall mobility at acceptor concentration of $7 \times 10^{18}$ cm$^3$ is about 70 cm$^2$V$^{-1}$s$^{-1}$ with the activation energy of 100 meV and the compensation ratio of 0.8 at 300 K. We also found that the compensation ratios conspicuously affected the Hall mobilities.

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