Projected Performance Advantage of Multilayer Graphene Nanoribbon as Transistor Channel Material

Details Projected Performance Advantage of Multilayer Graphene Nanoribbon as Transistor Channel Material Projected Performance Advantage of Multilayer Graphene Nanoribbon as Transistor Channel Material

2009-12-11

arxiv.org/abs/0912.2140v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

22 pages, 6 figures

Scientific paper

The performance limits of the multilayer graphene nanoribbon (GNR) field-effect transistor (FET) are assessed and compared to those of monolayer GNR FET and carbon nanotube (CNT) FET. The results show that with a thin high-k gate insulator and reduced interlayer coupling, multilayer GNR FET can significantly outperform its CNT counterpart with a similar gate and bandgap in terms of the ballistic on-current. In the presence of optical phonon scattering, which has a short mean free path in the graphene-derived nanostructures, the advantage of the multilayer GNRFET is even more significant. The simulation results indicate multilayer GNRs with incommensurate non-AB stacking and weak interlayer coupling are the best candidate for high performance GNR FETs.

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