Modeling a Schottky-barrier carbon nanotube field-effect transistor with ferromagnetic contacts

Details Modeling a Schottky-barrier carbon nanotube field-effect transistor with ferromagnetic contacts Modeling a Schottky-barrier carbon nanotube field-effect transistor with ferromagnetic contacts

2007-10-10

arxiv.org/abs/0710.2031v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

8 pages, 4 figures

Scientific paper

10.1088/0957-4484/18/48/485708

In this study, a model of a Schottky-barrier carbon nanotube field- effect transistor (CNT-FET), with ferromagnetic contacts, has been developed. The emphasis is put on analysis of current-voltage characteristics as well as shot (and thermal) noise. The method is based on the tight-binding model and the non- equilibrium Green's function technique. The calculations show that, at room temperature, the shot noise of the CNT FET is Poissonian in the sub-threshold region, whereas in elevated gate and drain/source voltage regions the Fano factor gets strongly reduced. Moreover, transport properties strongly depend on relative magnetization orientations in the source and drain contacts. In particular, one observes quite a large tunnel magnetoresistance, whose absolute value may exceed 50%.

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