Dissipation Mechanisms in Thermomechanically Driven Silicon Nitride Nanostrings

Details Dissipation Mechanisms in Thermomechanically Driven Silicon Nitride Nanostrings Dissipation Mechanisms in Thermomechanically Driven Silicon Nitride Nanostrings

2012-01-09

arxiv.org/abs/1201.1898v2

Appl. Phys. Lett. 100, 173111 (2012)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages (+3 supplementary), 3 figures, accepted to Applied Physics Letters

Scientific paper

10.1063/1.4704914

High-stress silicon nitride nanostrings are a promising system for sensing applications because of their ultra-high mechanical quality factors (Qs). By performing thermomechanical calibration across multiple vibrational modes, we are able to assess the roles of the various dissipation mechanisms in these devices. Specifically, we possess a set of nanostrings in which all measured modes fall upon a single curve of peak displacement versus frequency. This allows us to rule out bulk bending and intrinsic loss mechanisms as dominant sources of dissipation and to conclude that the most significant contribution to dissipation in high-stress nanostrings occurs at the anchor points.

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