Comparison of Process of Diffusion of Interstitial Oxygen Atoms and Interstitial Hydrogen Molecules in Silicon and Germanium Crystals: Quantumchemical Simulation

Details Comparison of Process of Diffusion of Interstitial Oxygen Atoms and Interstitial Hydrogen Molecules in Silicon and Germanium Crystals: Quantumchemical Simulation Comparison of Process of Diffusion of Interstitial Oxygen Atoms and Interstitial Hydrogen Molecules in Silicon and Germanium Crystals: Quantumchemical Simulation

2006-06-13

arxiv.org/abs/cond-mat/0606331v1

Physics

Condensed Matter

Materials Science

16 pages, 3 figures. E-MRS 2006 Spring Meeting, Nice (France), May 29 - June 2, 2006 Symposium U

Scientific paper

The theoretical analysis of the process of diffusion of interstitial oxygen atoms and hydrogen molecules in silicon and germanium crystals has been performed. The calculated values of the activation energy and pre-exponential factor for an interstitial oxygen atom Ea(Si) = 2.59 eV, Ea(Ge) = 2.05 eV, D(Si)= 0.28 cm2s-1, D(Ge)= 0.39 cm2s-1 and interstitial hydrogen molecule Ea(Si) = 0.79-0.83 eV, Ea(Ge) = 0.58-0.62 eV, D(Si)= 7.4 10(-4) cm2s-1, D(Ge)= 6.5 10(-4) cm2s-1 are in an excellent agreement with experimental ones and for the first time describe perfectly an experimental temperature dependence of an interstitial oxygen atom and hydrogen molecules diffusion constant in Si and Ge crystals. It is shown, that for a case of impurity atom with a strong interaction with a lattice (interstitial oxygen atom) process of diffusion has a cooperative nature - the activation energy and pre-exponential are controlled by the optimum position of three nearest lattice atoms. For a case of extended defect with a weak interaction (an interstitial hydrogen molecule) process of diffusion is determined by the activation barrier subjected to fluctuations connected with rotation of a hydrogen molecule. The effect of hydrostatic pressure on the process of diffusion is discussed also.

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