Point defects on III-V semiconductor surfaces

Details Point defects on III-V semiconductor surfaces Point defects on III-V semiconductor surfaces

2000-10-23

arxiv.org/abs/cond-mat/0010342v1

Physics

Condensed Matter

Materials Science

4 pages including figures. Submitted to Proceedings of the ICPS 25, Osaka, 17-22 September 2000. Related publications can be f

Scientific paper

The basic properties of point defects (atomic geometry, the position of
charge-transfer levels, and formation energies) on the (110) surface of GaAs,
GaP, and InP have been calculated employing density-functional theory. Based on
these results we discuss the electronic properties of surface defects, defect
segregation, and compensation.

Affiliated with

Also associated with

No associations

Rating

Point defects on III-V semiconductor surfaces does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Point defects on III-V semiconductor surfaces, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Point defects on III-V semiconductor surfaces will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-45904