Tunneling anisotropic magnetoresistance of NiFe/IrMn/MgO/Pt stack: An antiferromagnet based spin-valve

Details Tunneling anisotropic magnetoresistance of NiFe/IrMn/MgO/Pt stack: An antiferromagnet based spin-valve Tunneling anisotropic magnetoresistance of NiFe/IrMn/MgO/Pt stack: An antiferromagnet based spin-valve

2010-11-14

arxiv.org/abs/1011.3188v1

Physics

Condensed Matter

Materials Science

8 pages, 4 figures

Scientific paper

Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard drive read-heads and magnetic random access memories comprise two ferromagnetic (FM) electrodes whose relative magnetization orientations can be switched between parallel and antiparallel configurations, yielding the desired giant or tunneling magnetoresistance effect. In this paper we demonstrate >100$% spin-valve-like signal in a NiFe/IrMn/MgO/Pt stack with an antiferromagnet (AFM) on one side and a non-magnetic metal on the other side of the tunnel barrier. FM moments in NiFe are reversed by external fields <50mT and the exchange-spring effect of NiFe on IrMn induces rotation of AFM moments in IrMn which is detected by the measured tunneling anisotropic magnetoresistance (TAMR). Our work demonstrates a spintronic element whose transport characteristics are governed by an AFM. It demonstrates that sensitivity to low magnetic fields can be combined with large, spin-orbit coupling induced magneto-transport anisotropy using a single magnetic electrode. The AFM-TAMR provides means to study magnetic characteristics of AFM films by an electronic transport measurement.

Affiliated with

Also associated with

No associations

Rating

Tunneling anisotropic magnetoresistance of NiFe/IrMn/MgO/Pt stack: An antiferromagnet based spin-valve does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Tunneling anisotropic magnetoresistance of NiFe/IrMn/MgO/Pt stack: An antiferromagnet based spin-valve, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Tunneling anisotropic magnetoresistance of NiFe/IrMn/MgO/Pt stack: An antiferromagnet based spin-valve will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-455968