Piezoelectric electron-phonon interaction in impure semiconductors: 2D electrons versus composite fermions

Details Piezoelectric electron-phonon interaction in impure semiconductors: 2D electrons versus composite fermions Piezoelectric electron-phonon interaction in impure semiconductors: 2D electrons versus composite fermions

1997-05-25

arxiv.org/abs/cond-mat/9705254v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

12 pages, Latex, Nordita report

Scientific paper

10.1103/PhysRevB.56.15822

We develop a unified treatment of the piesoelectric coupling between two-dimensional electrons and bulk phonons in both cases of zero and strong magnetic fields, the latter corresponding to even denominator filling fractions. In contrast to the case of coupling via the deformation potential, the leading contributions due to impurity-renormalized electron-phonon vertices are not exactly cancelled by processes of inelastic electron-impurity scattering. Electron energy relaxation time, diffusion correction to the conductivity, and phonon emission rate by hot electrons are computed for realistic $GaAs/AlGaAs$ heterostructures.

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