Identification of relaxation and diffusion mechanisms in amorphous silicon

Details Identification of relaxation and diffusion mechanisms in amorphous silicon Identification of relaxation and diffusion mechanisms in amorphous silicon

1998-04-29

arxiv.org/abs/cond-mat/9804317v1

Physics

Condensed Matter

4 pages, three figures, submitted to PRL

Scientific paper

10.1103/PhysRevLett.81.1865

The dynamics of amorphous silicon at low temperatures can be characterized by a sequence of discrete activated events, through which the topological network is locally reorganized. Using the activation-relaxation technique, we create more than 8000 events, providing an extensive database of relaxation and diffusion mechanisms. The generic properties of these events - size, number of atoms involved, activation energy, etc. - are discussed and found to be compatible with experimental data. We introduce a complete and unique classification of defects based on their topological properties and apply it to study of events involving only four-fold coordinated atoms. For these events, we identify and present in detail three dominant mechanisms.

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