Sub-microsecond correlations in photoluminescence from InAs quantum dots

Details Sub-microsecond correlations in photoluminescence from InAs quantum dots Sub-microsecond correlations in photoluminescence from InAs quantum dots

2003-08-16

arxiv.org/abs/cond-mat/0308323v1

Phys. Rev. B 69, 205324 (2004)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

8 pages, 8 figures

Scientific paper

10.1103/PhysRevB.69.205324

Photon correlation measurements reveal memory effects in the optical emission of single InAs quantum dots with timescales from 10 to 800 ns. With above-band optical excitation, a long-timescale negative correlation (antibunching) is observed, while with quasi-resonant excitation, a positive correlation (blinking) is observed. A simple model based on long-lived charged states is presented that approximately explains the observed behavior, providing insight into the excitation process. Such memory effects can limit the internal efficiency of light emitters based on single quantum dots, and could also be problematic for proposed quantum-computation schemes.

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