One-band Hubbard model with hopping asymmetry and the effective theory at finite U: Phase diagram and metal-insulator transition

Details One-band Hubbard model with hopping asymmetry and the effective theory at finite U: Phase diagram and metal-insulator transition One-band Hubbard model with hopping asymmetry and the effective theory at finite U: Phase diagram and metal-insulator transition

2005-07-21

arxiv.org/abs/cond-mat/0507494v1

Phys. Rev. B 72, 045130 (2005)

Physics

Condensed Matter

Strongly Correlated Electrons

15pages,9figures

Scientific paper

10.1103/PhysRevB.72.045130

We study the one-band Hubbard model at half filling with hopping asymmetry and its effective model at finite but large U up to the second order of tmix/U. Two variational wave functions, the resonating valence bond (RVB) wave function and antiferromagnetic (AF) RVB coexisted wave function, are studied by variational Monte Carlo method on L*L square lattices up to L=12. Based on these two wave functions, the phase diagrams for both models are presented. For the Hubbard model, we find that there is a metal-insulator transition when the hopping parameter tmix which changes the local double occupant vanishes while only a metal-insulator crossover is explored for any finite tmix. For the effective model in which the perturbation expansion is up to the second order of tmix/U, a clear metal-insulator transition can be identified for both variational wave functions and the phase diagram can be drawn accordingly. In both models, we find that the systems are dominated by AF-RVB wave function when U is large while the RVB wave function is favored when U is small.

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