Quantum Efficiency of Charge Qubit Measurements Using a Single Electron Transistor

Details Quantum Efficiency of Charge Qubit Measurements Using a Single Electron Transistor Quantum Efficiency of Charge Qubit Measurements Using a Single Electron Transistor

2010-05-05

arxiv.org/abs/1005.0726v2

Int J Theor Phys (2012) 51:629-638

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 2 figures

Scientific paper

10.1007/s10773-011-0943-3

The quantum efficiency, which characterizes the quality of information gain against information loss, is an important figure of merit for any realistic quantum detectors in the gradual process of collapsing the state being measured. In this work we consider the problem of solid-state charge qubit measurements with a single-electron-transistor (SET). We analyze two models: one corresponds to a strong response SET, and the other is a tunable one in response strength. We find that the response strength would essentially bound the quantum efficiency, making the detector non-quantum-limited. Quantum limited measurements, however, can be achieved in the limits of strong response and asymmetric tunneling. The present study is also associated with appropriate justifications for the measurement and backaction-dephasing rates, which were usually evaluated in controversial methods.

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