Current-voltage characteristics of a graphene nanoribbon field-effect transistor

Details Current-voltage characteristics of a graphene nanoribbon field-effect transistor Current-voltage characteristics of a graphene nanoribbon field-effect transistor

2008-01-10

arxiv.org/abs/0801.1543v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

8 pages, 8 figures

Scientific paper

We present an analytical device model for a field-effect transistor based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting substrate (the back gate) and the top gate controlling the source-drain current. The equations of the model of a graphene nanoribbon field-effect transistor (GNR-FET) include the Poisson equation in the weak nonlocality approximation. Using this model, we find explicit analytical formulas for the spatial distributions of the electric potential along the channel and for the GNR-FET current-voltage characteristics (the dependences of the source-drain current on the drain voltages as well as on the back gate and top gate voltages) for different geometric parameters of the device. It is shown that the shortening of the top gate can result in a substantial modification of the GNR-FET current-voltage characteristics.

Affiliated with

Also associated with

No associations

Rating

Current-voltage characteristics of a graphene nanoribbon field-effect transistor does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Current-voltage characteristics of a graphene nanoribbon field-effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Current-voltage characteristics of a graphene nanoribbon field-effect transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-436123