Spin relaxation of conduction electrons in bulk III-V semiconductors

Details Spin relaxation of conduction electrons in bulk III-V semiconductors Spin relaxation of conduction electrons in bulk III-V semiconductors

2001-11-06

arxiv.org/abs/cond-mat/0111076v3

Physics

Condensed Matter

Materials Science

an error in earlier version corrected

Scientific paper

10.1103/PhysRevB.66.035207

Spin relaxation time of conduction electrons through the Elliot-Yafet, D'yakonov-Perel and Bir-Aronov-Pikus mechanisms is calculated theoretically for bulk GaAs, GaSb, InAs and InSb of both $n$- and $p$-type. Relative importance of each spin relaxation mechanism is compared and the diagrams showing the dominant mechanism are constructed as a function of temperature and impurity concentrations. Our approach is based upon theoretical calculation of the momentum relaxation rate and allows understanding of the interplay between various factors affecting the spin relaxation over a broad range of temperature and impurity concentration.

Affiliated with

Also associated with

No associations

Rating

Spin relaxation of conduction electrons in bulk III-V semiconductors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Spin relaxation of conduction electrons in bulk III-V semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Spin relaxation of conduction electrons in bulk III-V semiconductors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-433642