The role of hydrostatic stress in determining the bandgap of InN epilayers

Details The role of hydrostatic stress in determining the bandgap of InN epilayers The role of hydrostatic stress in determining the bandgap of InN epilayers

2007-05-19

arxiv.org/abs/0705.2812v1

Physics

Condensed Matter

Materials Science

Submitted to Appl. Phys. Lett

Scientific paper

10.1063/1.2784199

We establish a correlation between the internal stress in InN epilayers and their optical properties such as the measured absorption band edge and photoluminescence emission wavelength. By a careful evaluation of the lattice constants of InN epilayers grown on c-plane sapphire substrates under various conditions by metalorganic vapor phase epitaxy we find that the films are under primarily hydrostatic stress. This results in a shift in the band edge to higher energy. The effect is significant, and may be responsible for some of the variations in InN bandgap reported in the literature.

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