Temperature stability of intersubband transitions in AlN/GaN quantum wells

Details Temperature stability of intersubband transitions in AlN/GaN quantum wells Temperature stability of intersubband transitions in AlN/GaN quantum wells

2010-10-06

arxiv.org/abs/1010.1215v1

Appl. Phys. Lett. 97, 043507 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1063/1.3456528

Temperature dependence of intersubband transitions in AlN/GaN multiple quantum wells grown with molecular beam epitaxy is investigated both by absorption studies at different temperatures and modeling of conduction-band electrons. For the absorption study, the sample is heated in increments up to $400^\circ$C. The self-consistent Schr\"odinger-Poisson modeling includes temperature effects of the band-gap and the influence of thermal expansion on the piezoelectric field. We find that the intersubband absorption energy decreases only by $\sim 6$ meV at $400^\circ$C relative to its room temperature value.

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