Tunneling anisotropic magnetoresistance in multilayer-(Co/Pt)/AlOx/Pt structures

Details Tunneling anisotropic magnetoresistance in multilayer-(Co/Pt)/AlOx/Pt structures Tunneling anisotropic magnetoresistance in multilayer-(Co/Pt)/AlOx/Pt structures

2008-01-08

arxiv.org/abs/0801.1192v1

Physics

Condensed Matter

Materials Science

4 pages, 5 figures, to be published in Phys. Rev. Lett

Scientific paper

10.1103/PhysRevLett.100.087204

We report observations of tunneling anisotropic magnetoresitance (TAMR) in vertical tunnel devices with a ferromagnetic multilayer-(Co/Pt) electrode and a non-magnetic Pt counter-electrode separated by an AlOx barrier. In stacks with the ferromagnetic electrode terminated by a Co film the TAMR magnitude saturates at 0.15% beyond which it shows only weak dependence on the magnetic field strength, bias voltage, and temperature. For ferromagnetic electrodes terminated by two monolayers of Pt we observe order(s) of magnitude enhancement of the TAMR and a strong dependence on field, temperature and bias. Discussion of experiments is based on relativistic ab initio calculations of magnetization orientation dependent densities of states of Co and Co/Pt model systems.

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