Fractional and unquantized dc voltage generation in THz-driven semiconductor superlattices

Details Fractional and unquantized dc voltage generation in THz-driven semiconductor superlattices Fractional and unquantized dc voltage generation in THz-driven semiconductor superlattices

2001-03-29

arxiv.org/abs/cond-mat/0103608v3

Europhysics Letters 56 (2001) 842; Erratum: 68 (2004) 753

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

6 pages, 3 figures, RevTEX, EPSF. Revised version v3: corrected typos

Scientific paper

10.1209/epl/i2001-00596-9

We consider the spontaneous creation of a dc voltage across a strongly coupled semiconductor superlattice subjected to THz radiation. We show that the dc voltage may be approximately proportional either to an integer or to a half- integer multiple of the frequency of the applied ac field, depending on the ratio of the characteristic scattering rates of conducting electrons. For the case of an ac field frequency less than the characteristic scattering rates, we demonstrate the generation of an unquantized dc voltage.

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