Closely spaced and separately contacted 2d electron and 2d hole gases by in situ focussed ion implantation

Details Closely spaced and separately contacted 2d electron and 2d hole gases by in situ focussed ion implantation Closely spaced and separately contacted 2d electron and 2d hole gases by in situ focussed ion implantation

2001-03-28

arxiv.org/abs/cond-mat/0103589v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1063/1.1463698

Separately contacted double layers of a 2d electron - 2d hole gases have been prepared in GaAs separated by thin AlGaAs barriers with thicknesses down to 15 nm. The molecular-beam-epitaxial growth was interrupted just before the barrier in order to use in situ focussed-ion-beam implantation to pattern contacts which extend underneath the barrier. The two charge gases form upon biasing the p- and n-type contacts underneath and above the barrier in forward direction and show independent transistor-like behavior.

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