Quantum resistance metrology in graphene

Details Quantum resistance metrology in graphene Quantum resistance metrology in graphene

2008-10-22

arxiv.org/abs/0810.4064v1

Appl. Phys. Lett. 93, 222109 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1063/1.3043426

We have performed a metrological characterization of the quantum Hall resistance in a 1 $\mu$m wide graphene Hall-bar. The longitudinal resistivity in the center of the $\nu=\pm 2$ quantum Hall plateaus vanishes within the measurement noise of 20 m$\Omega$ upto 2 $\mu$A. Our results show that the quantization of these plateaus is within the experimental uncertainty (15 ppm for 1.5$ \mu$A current) equal to that in conventional semiconductors. The principal limitation of the present experiments are the relatively high contact resistances in the quantum Hall regime, leading to a significantly increased noise across the voltage contacts and a heating of the sample when a high current is applied.

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