Electric-field induced penetration of edge states at the interface between monolayer and bilayer graphene

Details Electric-field induced penetration of edge states at the interface between monolayer and bilayer graphene Electric-field induced penetration of edge states at the interface between monolayer and bilayer graphene

2011-07-07

arxiv.org/abs/1107.1277v2

Phys. Rev. B 85, 125430 (2012)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

9 pages

Scientific paper

10.1103/PhysRevB.85.125430

The edge states in the hybrid system of single-layer and double-layer graphene are studied in the tight-binding model theoretically. The edge states in one side of the interface between single-layer and double-layer graphene are shown to penetrate into the single-layer region when the perpendicular electric field is applied, while they are localized in the double-layer region without electric field. The edge states in another side of the interface are localized in the double-layer region independent of the electric field. This field-induced penetration of the edge states can be applied to switching devices. We also find a new type of the edge states at the boundary between single-layer and the double-layer graphene.

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