Spin-Filtering Multiferroic-Semiconductor Heterojunctions

Details Spin-Filtering Multiferroic-Semiconductor Heterojunctions Spin-Filtering Multiferroic-Semiconductor Heterojunctions

2007-09-04

arxiv.org/abs/0709.0318v1

Appl. Phys. Lett. 91, 202910 (2007)

Physics

Condensed Matter

Materials Science

4 pages, 4 figures

Scientific paper

10.1063/1.2814961

We report on the structural and electronic properties of the interface between the multiferoic oxide YMnO$_3$ and wide band-gap semiconductor GaN studied with the Hubbard-corrected local spin density approximation (LSDA+U) to density-functional theory (DFT). We find that the band offsets at the interface between antiferromagnetically ordered YMnO$_3$ and GaN are different for spin-up and spin-down states. This behavior is due to the spin splitting of the valence band induced by the interface. The energy barrier depends on the relative orientation of the electric polarization with respect to the polarization direction of the GaN substrate suggesting an opportunity to create magnetic tunnel junctions in this materials system.

Affiliated with

Also associated with

No associations

Rating

Spin-Filtering Multiferroic-Semiconductor Heterojunctions does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Spin-Filtering Multiferroic-Semiconductor Heterojunctions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Spin-Filtering Multiferroic-Semiconductor Heterojunctions will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-414020