High-finesse optical quantum gates for electron spins in artificial molecules

Details High-finesse optical quantum gates for electron spins in artificial molecules High-finesse optical quantum gates for electron spins in artificial molecules

2003-04-11

arxiv.org/abs/cond-mat/0304272v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

To appear in Phys. Rev. Lett

Scientific paper

10.1103/PhysRevLett.90.206802

A doped semiconductor double-quantum-dot molecule is proposed as a qubit realization. The quantum information is encoded in the electron spin, thus benefiting from the long relevant decoherence times; the enhanced flexibility of the molecular structure allows to map the spin degrees of freedom onto the orbital ones and vice versa, and opens the possibility for high-finesse (conditional and unconditional) quantum gates by means of stimulated Raman adiabatic passage.

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